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SN74ABT863

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具有三态输出的 9 位总线收发器

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SN74ABT863

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Number of channels 9 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
Number of channels 9 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² (15.5 mm × 10.3 mm)
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs

    • EPIC-IIB is a trademark of Texas Instruments Incorporated.
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs

    • EPIC-IIB is a trademark of Texas Instruments Incorporated.

The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

The outputs are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT863 is characterized for operation over the full military temperature range of -55°C to 125°C.
The SN74ABT863 is characterized for operation from -40°C to 85°C.

The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

The outputs are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT863 is characterized for operation over the full military temperature range of -55°C to 125°C.
The SN74ABT863 is characterized for operation from -40°C to 85°C.

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* 数据表 9-Bit Bus Transceivers With 3-State Outputs 数据表 (Rev. E) 1998-7-10

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