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  • TPDxEUSB30 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface

    • SLVSAC2G August   2010  – June 2021 TPD2EUSB30 , TPD2EUSB30A , TPD4EUSB30

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  • TPDxEUSB30 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on D+, D- Pins
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
  13. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DRT|3
    • MPDS340
Thermal pad, mechanical data (Package|Pins)
  • DRT|3
    • QFND295
Orderable Information
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  • slvsac2g_pm
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DATA SHEET

TPDxEUSB30 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface

1 Features

  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping

2 Applications

  • Notebooks
  • Set-top boxes
  • DVD players
  • Media players
  • Portable computers

3 Description

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 μs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

Device Information(1)
PART NUMBERPACKAGEBODY SIZE (NOM)
TPD2EUSB30SOT (3)1.00 mm × 0.80 mm
TPD2EUSB30A
TPD4EUSB30USON (10)2.50 mm × 1.00 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
GUID-085F4262-2C33-43CD-A938-C98910916F89-low.gifTPD4EUSB30 Circuit
GUID-D1192DFE-71F9-4019-B16B-B9D666AE15CD-low.gifTPD2EUSB30/A Circuit

4 Revision History

Changes from Revision F (October 2015) to Revision G (June 2021)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed the Pin Functions table to clarify pin order and functionGo

Changes from Revision E (August 2014) to Revision F (October 2015)

  • Moved the storage temperature to the Absolute Maximum Ratings table and updated the Handling Ratings table to an ESD Ratings tableGo
  • Added test condition frequency to capacitance Go

Changes from Revision D (August 2012) to Revision E (July 2014)

  • Added Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

Changes from Revision C (December 2011) to Revision D (August 2012)

  • Updated Dynamic Resistance value.Go
  • Updated Dynamic Resistance value.Go

Changes from Revision B (July 2011) to Revision C (December 2011)

  • Added Insertion Loss graphic to TYPICAL OPERATING CHARACTERISTICS section.Go

Changes from Revision A (December 2010) to Revision B (July 2011)

  • Changed TOP-SIDE MARKING column in the Ordering Information Table Go

Changes from Revision * (August 2010) to Revision A (December 2010)

  • Added TPS2EUSB30A part to document.Go

5 Pin Configuration and Functions

GUID-4D24F83F-9DF7-445D-8DDE-D3D0B2DA960E-low.gifFigure 5-1 DRT Package3-Pin SOTTop View
GUID-1B54AB68-3B54-4829-93B3-E268474648F2-low.gifFigure 5-2 DQA Package10-Pin USONTop View
Table 5-1 Pin Functions
PIN TYPE DESCRIPTION
NAME DRT DQA
D1+ 1 1 ESD port High-speed ESD clamp, provides ESD protection to the high-speed differential data lines.
D1– 2 2
D2+ — 4
D2– — 5
GND 3 3, 8 GND Ground
N.C. — 6, 7,
9, 10		 — Not normally connected

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MINMAXUNIT
IO voltage (D+ and D- pins)TPD2EUSB30, TPD4EUSB3006V
TPD2EUSB30A04
IEC 61000-4-5 surge current (tp = 8/20 μs)D+, D– pins5A
IEC 61000-4-5 surge peak power (tp = 8/20 μs)D+, D– pins45W
TAOperating free-air temperature–4085°C
TstgStorage temperature–65125°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)2500V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)1500
IEC 61000-4-2 Contact DischargeD+, D– pins8000
IEC 61000-4-2 Air-Gap Discharge (TPD2EUSB30/A)D+, D– pins8000
IEC 61000-4-2 Air-Gap Discharge (TPD4EUSB30)D+, D– pins9000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
TA operating free-air temperature–4085°C
Operating VoltageTPD2EUSB30, TPD4EUSB3005.5V
TPD2EUSB30A03.6

6.4 Thermal Information

THERMAL METRIC(1)TPD2EUSB30TPD2EUSB30ATPD4EUSB30UNIT
DRT (SOT)DRT (SOT)DQA (USON)
3 PINS3 PINS10 PINS
RθJAJunction-to-ambient thermal resistance610.2610.2162.2°C/W
RθJC(top)Junction-to-case (top) thermal resistance288.0288.0128.3°C/W
RθJBJunction-to-board thermal resistance118.4118.456.7°C/W
ψJTJunction-to-top characterization parameter20.220.213.8°C/W
ψJBJunction-to-board characterization parameter116.4116.456.6°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/A8.1°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltage (D+ and D- pins)TPD2EUSB30, TPD4EUSB305.5V
TPD2EUSB30A3.6V
VclampClamp voltageD+,D– pins to ground,IIO = 1 A8V
IIOCurrent from IO port to supply pinsVIO = 2.5 V,ID = 8 mA0.010.1μA
VDDiode forward voltageD+,D– pins,
lower clamp diode,		VIO = 2.5 V,
ID = 8 mA		0.60.80.95V
RdynDynamic resistanceD+,D– pinsI = 1 A0.6Ω
CIO-IOCapacitance IO to IOD+,D– pinsVIO = 2.5 V; ƒ = 100 kHz0.05pF
CIO-GNDCapacitance IO to GNDD+,D– pins (DRT)VIO = 2.5 V; ƒ = 100 kHz0.7pF
D1+, D1-,
D2+, D2- (DQA )		0.8
VBRBreak-down voltage, TPD2EUSB30, TPD4EUSB30IIO = 1 mA7V
Break-down voltage, TPD2EUSB30AIIO = 1 mA4.5V

 
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