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DRV7167

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100V 70A half-bridge GaN motor driver power stage

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DRV7167

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Data sheet Order now

Product details

Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 8.8 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 8.8 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
VQFN-FCRLF (VBN) 18 31.5 mm² 7 x 4.5
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 70Arms, 250A (pulsed, 300 µs)
    • Supports upto 500 kHz PWM switching frequency
    • Excellent propagation delay (20ns typical) and matching (2ns typical)
    • Turn-on and turn-off slew-rate control for both FETs
    • Zero-voltage detection (ZVD) reporting for optimizing dead-time in soft switching applications
    • Single PWM input option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Integrated protection features
    • Short circuit protection in Independent Inout Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, under-voltage and short-circuit events
    • Supply rail undervoltage lockout protection
  • Package optimized for easy PCB layout
    • Exposed top QFN package for top-side cooling
    • Large GND pad for bottom-side cooling
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 70Arms, 250A (pulsed, 300 µs)
    • Supports upto 500 kHz PWM switching frequency
    • Excellent propagation delay (20ns typical) and matching (2ns typical)
    • Turn-on and turn-off slew-rate control for both FETs
    • Zero-voltage detection (ZVD) reporting for optimizing dead-time in soft switching applications
    • Single PWM input option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Integrated protection features
    • Short circuit protection in Independent Inout Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, under-voltage and short-circuit events
    • Supply rail undervoltage lockout protection
  • Package optimized for easy PCB layout
    • Exposed top QFN package for top-side cooling
    • Large GND pad for bottom-side cooling

The DRV7167A is a 100V half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consist of two 100V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The DRV7167A is available in 7.0mm × 4.5mm × 0.89mm lead-free packages and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the GVDD voltage. A proprietary bootstrap voltage regulation technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device supports turn-on and turn-off slew-rate control for both FETs, single PWM mode for use with IO-limited controllers, short-circuit protection (SCP) , Over-Temperature Detection (OTD) and zero-voltage detection (ZVD) reporting to minimize third quandrant condution time.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7167A is a 100V half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consist of two 100V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The DRV7167A is available in 7.0mm × 4.5mm × 0.89mm lead-free packages and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the GVDD voltage. A proprietary bootstrap voltage regulation technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device supports turn-on and turn-off slew-rate control for both FETs, single PWM mode for use with IO-limited controllers, short-circuit protection (SCP) , Over-Temperature Detection (OTD) and zero-voltage detection (ZVD) reporting to minimize third quandrant condution time.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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* Data sheet DRV7167A 100-V , 70A Half-Bridge GaN Motor Driver Power Stage datasheet PDF | HTML 01 Oct 2025
Application brief Motor Control in Humanoid Robots (Rev. A) PDF | HTML 04 Jun 2026

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Reference designs

TIDA-010979 — 48v 1kw robot joint motor control with industrial communication reference design

This reference design features TI Sitara™ MCU- AM261x devices handling an industrial Ethernet-connected motor drive. The design uses a 70mm diameter printed circuit board (PCB) to drive a humanoid robot joint (48V, 1kW Eyoubot motor). The design demonstrates a small form factor and simplified (...)
Design guide: PDF
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VQFN-FCRLF (VBN) 18 Ultra Librarian
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