Product details

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Current sense Amplifier, Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125 TI functional safety category Functional Safety Quality-Managed
WQFN (RTA) 40 36 mm² (6 mm × 6 mm)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional triple low-side current shunt amplifiers
  • Functional Safety Quality-Managed
    • Documentation available to aid IEC 61800-5-2 functional safety system design
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional triple low-side current shunt amplifiers
  • Functional Safety Quality-Managed
    • Documentation available to aid IEC 61800-5-2 functional safety system design
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.

The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.

The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet DRV835xF 100-V Three-Phase Smart Gate Driver datasheet (Rev. B) PDF | HTML Aug 27, 2021
Application brief Motor Control in Humanoid Robots (Rev. A) PDF | HTML Jun 4, 2026
Application note Relating Payload to Brushless DC Motor Driver Specifications PDF | HTML Dec 2, 2024
Technical article How motor drive innovations are helping solve robotic movement design challenges PDF | HTML Jan 5, 2024
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML Jun 22, 2021
Functional safety information Design Smaller Safe Torque Off (STO) Systems Using 3-Phase Smart Gate Drivers PDF | HTML Mar 4, 2021
Analog design Journal Implementing STO functionality w/ diagnostic and monitoring for ind. motor drive Sep 30, 2019

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Evaluation board

DRV8353RH-EVM — DRV8353RH evaluation module, three-phase brushless DC smart gate driver

The DRV8353RH-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RH gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

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Evaluation board

DRV8353RS-EVM — DRV8353RS evaluation module, three-phase brushless DC smart gate driver 

The DRV8353RS-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8353RS gate driver and CSD19532Q5B NexFET™ MOSFETs.

The module has individual DC bus and phase voltage sense as well as individual low-side current shunt amplifiers, making this evaluation module ideal for sensorless BLDC (...)

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Getting started

MSP-MOTOR-CONTROL — MSPM0 Firmware solutions for motor control applications

MSP Motor Control is a collection of software, tools and examples to spin motors in 30 minutes or less with MSPM0 Arm® Cortex® M0+ MCUs and popular motor driver solutions.

MSP Motor Control provides examples for supported hardware kits to spin brushed, stepper, and three-phase motors with sensored (...)

Supported products & hardware
Calculation tool

BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
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WQFN (RTA) 40 Ultra Librarian

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