Calculation tool
BLDC-MAX-QG-MOSFET-CALCULATOR — Calculate the maximum QG MOSFET for your motor driver
Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Data sheet
DRV8350F
- 9 to 100-V, Triple half-bridge gate driver
- Optional triple low-side current shunt amplifiers
- Functional Safety Quality-Managed
- Documentation available to aid IEC 61800-5-2 functional safety system design
- Smart gate drive architecture
- Adjustable slew rate control for EMI performance
- VGS handshake and minimum dead-time insertion to prevent shoot-through
- 50-mA to 1-A peak source current
- 100-mA to 2-A peak sink current
- dV/dt mitigation through strong pulldown
- Integrated gate driver power supplies
- High-side doubler charge pump For 100% PWM duty cycle control
- Low-side linear regulator
- Integrated triple current shunt amplifiers
- Adjustable gain (5, 10, 20, 40 V/V)
- Bidirectional or unidirectional support
- 6x, 3x, 1x, and independent PWM modes
- Supports 120° sensored operation
- SPI or hardware interface available
- Low-power sleep mode (20 µA at VVM = 48-V)
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Gate drive supply undervoltage (GDUV)
- MOSFET VDS overcurrent protection (OCP)
- MOSFET shoot-through prevention
- Gate driver fault (GDF)
- Thermal warning and shutdown (OTW/OTSD)
- Fault condition indicator (nFAULT)
The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.
The DRV835xF uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events
Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.
More information
Safety documentation and other information are available. Request now
Technical documentation
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View all 5 | Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | DRV835xF 100-V Three-Phase Smart Gate Driver datasheet (Rev. B) | PDF | HTML | 27 Aug 2021 |
| Application note | Relating Payload to Brushless DC Motor Driver Specifications | PDF | HTML | 02 Dec 2024 | |
| Application note | System Design Considerations for High-Power Motor Driver Applications | PDF | HTML | 22 Jun 2021 | |
| Functional safety information | Design Smaller Safe Torque Off (STO) Systems Using 3-Phase Smart Gate Drivers | PDF | HTML | 04 Mar 2021 | |
| Analog Design Journal | Implementing STO functionality w/ diagnostic and monitoring for ind. motor drive | 30 Sep 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
DRV8350H-EVM — DRV8350H three-phase smart gate driver evaluation module
The DRV8350H-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350H gate driver and CSD19532Q5B NexFET™ power blocks.
The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)
User guide: PDF
Evaluation board
DRV8350S-EVM — DRV8350S three-phase smart gate driver evaluation module
The DRV8350S-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350S gate driver and CSD19532Q5B NexFET™ power blocks.
The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)
User guide: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| WQFN (RTV) | 32 | Ultra Librarian |
Ordering & quality
Information included:
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Information included:
- Fab location
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Support & training
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