The LM2103 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The INL inverting input allows the driver to be used in either dual or single PWM input applications.
The fixed dead-time and the –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The LM2103 is available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.
For additional terms or required resources, click any title below to view the detail page where available.
The LM2105 evaluation module (EVM) is a platform for evaluating LM2105 performance. LM2105 is a 105-V, boot-voltage, high-side, low-side driver with 0.5-A peak source and 0.8-A sink current for driving two N-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). The same (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.