TPS7H1210-SEP

ACTIVE

Radiation-tolerant, -3-V to -16.5-V input, 1-A, negative linear regulator in space-enhanced plastic

TPS7H1210-SEP

ACTIVE

Product details

Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Rating Space Noise (µVrms) 13.7 PSRR at 100 KHz (dB) 61 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
Output options Adjustable Output, Negative Output Iout (max) (A) 1 Vin (max) (V) -3 Vin (min) (V) -16.5 Vout (max) (V) -1.2 Vout (min) (V) -15.5 Rating Space Noise (µVrms) 13.7 PSRR at 100 KHz (dB) 61 Iq (typ) (mA) 0.21 Thermal resistance θJA (°C/W) 32.7 Load capacitance (min) (µF) 10 Regulated outputs (#) 1 Features Enable, Soft start Accuracy (%) 2 Dropout voltage (Vdo) (typ) (mV) 363 Operating temperature range (°C) -55 to 125 Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (krad) 30
VQFN (RGW) 20 25 mm² 5 x 5
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing
  • Vendor item drawing available, VID V62/21616
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 43 MeV-cm2/mg
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized to LET = 43 MeV-cm2/mg
  • Low noise: 13.7-µVRMS typical (10 Hz to 100 kHz)
  • High power-supply rejection ration, PSRR (typical at VIN = –6 V, VOUT = –5 V, IOUT = 1 A):
    • 61 dB at 100 Hz
    • 61 dB at 100 kHz
    • 41 dB at 1 MHz
  • Input voltage range: –3 V to –16.5 V
  • Adjustable output: –1.2 V to –15.5 V
  • Up to 1-A output current
  • Stable with ceramic capacitors ≥ 10 µF
  • Built-in current-limit and thermal shutdown protection
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhanced mold compound for low outgassing

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

The TPS7H1210-SEP negative voltage linear regulator is a low noise, high PSRR regulator capable of sourcing a maximum load of 1 A.

The regulator include a CMOS logic-level-compatible enable pin (EN) to allow for user-customizable power management schemes. Other features include built-in current limit and thermal shutdown to protect the device and system during fault conditions.

The TPS7H1210-SEP device is designed using bipolar technology primarily for high-accuracy, low-noise applications, where clean voltage rails are critical to maximize system performance. Therefore, it ideal to power op amps, ADCs, DACs, and other high-performance analog circuitry.

Additionally, the TPS7H1210-SEP device is suitable for post DC-DC converter regulation. By filtering the output voltage ripple inherent to DC-DC switching conversion, maximum system performance is ensured in sensitive devices and RF applications.

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Technical documentation

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Type Title Date
* Data sheet TPS7H1210-SEP –16.5-V, 1-A, Negative Linear Regulator in Space Enhanced Plastic datasheet PDF | HTML 23 Nov 2021
* VID TPS7H1210-SEP VID V62-21616 04 Jan 2022
* Radiation & reliability report TPS7H1210-SEP Single-Event Effects (SEE) Test Report 13 Dec 2021
* Radiation & reliability report TPS7H1210-SEP Neutron Displacement Damage (NDD) Characterization 24 Nov 2021
* Radiation & reliability report TPS7H1210-SEP Total Ionizing Dose (TID) 24 Nov 2021
* Radiation & reliability report TPS7H1210-SEP Production Flow and Reliability Report PDF | HTML 08 Nov 2021
Selection guide TI Space Products (Rev. J) 12 Feb 2024
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 11 Jan 2024
Technical article 우주 항공 강화 제품이 저지구 궤도 애플리케이션의 과제를 해결하는 방법 (Rev. A) PDF | HTML 11 Jan 2024
Technical article How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML 18 Dec 2023
White paper Parallel LDO Architecture Design Using Ballast Resistors PDF | HTML 14 Dec 2022
White paper Comprehensive Analysis and Universal Equations for Parallel LDO's Using Ballast PDF | HTML 13 Dec 2022
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15 Sep 2022
User guide TPS7H1210EVM User's Guide PDF | HTML 22 Nov 2021
Certificate TPS7H1210EVM EU RoHS Declaration of Conformity (DoC) 04 Oct 2021
E-book Radiation Handbook for Electronics (Rev. A) 21 May 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TPS7H1210EVM — TPS7H1210-SEP evaluation module for -3-V to -16.5-V input, 1-A, negative linear regulator

The TPS7H1210 evaluation module (EVM) is an engineering demonstration board for evaluating the TPS7H1210-SEP space-enhanced, low-dropout (LDO), negative-voltage linear regulator.

User guide: PDF | HTML
Not available on TI.com
Simulation model

TPS7H1210-SEP PSpice Transient Model

SBVM985.ZIP (23 KB) - PSpice Model
Reference designs

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
Package Pins CAD symbols, footprints & 3D models
VQFN (RGW) 20 Ultra Librarian

Ordering & quality

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  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

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