产品详情

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.75 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/µs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 9 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 2.5 Input bias current (max) (pA) 0.4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.75 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/µs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 9 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 2.5 Input bias current (max) (pA) 0.4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.04 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Specified for 100 kΩ and 5 kΩ Loads
  • High Voltage Gain:  120 dB
  • Low Offset Voltage Drift: 2.5 μV/°C
  • Ultra Low Input Bias Current: 40 fA
  • Input Common-Mode Range Includes V
  • Operating Range from +5V to +15V Supply
  • Low Distortion: 0.01% at 1 kHz
  • Slew Rate: 0.11 V/μs
  • Micropower Operation: 0.5 mW

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  • Specified for 100 kΩ and 5 kΩ Loads
  • High Voltage Gain:  120 dB
  • Low Offset Voltage Drift: 2.5 μV/°C
  • Ultra Low Input Bias Current: 40 fA
  • Input Common-Mode Range Includes V
  • Operating Range from +5V to +15V Supply
  • Low Distortion: 0.01% at 1 kHz
  • Slew Rate: 0.11 V/μs
  • Micropower Operation: 0.5 mW

All trademarks are the property of their respective owners.

The LMC6022 is a CMOS dual operational amplifier which can operate from either a single supply or dual supplies. Its performance features include an input common-mode range that reaches V, low input bias current, and voltage gain (into 100k and 5 kΩ loads) that is equal to or better than widely accepted bipolar equivalents, while the power supply requirement is less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LMC6024 datasheet for a CMOS quad operational amplifier with these same features.

The LMC6022 is a CMOS dual operational amplifier which can operate from either a single supply or dual supplies. Its performance features include an input common-mode range that reaches V, low input bias current, and voltage gain (into 100k and 5 kΩ loads) that is equal to or better than widely accepted bipolar equivalents, while the power supply requirement is less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LMC6024 datasheet for a CMOS quad operational amplifier with these same features.

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* 数据表 LMC6022 Low Power CMOS Dual Operational Amplifier 数据表 (Rev. D) 2013年 3月 22日

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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