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特定于协议的开关和多路复用器

TS3V330

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3.3V、2:1 (SPDT)、4 通道视频开关

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数据表

TS3V330

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产品详情

Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8
Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8
SOIC (D) 16 59.4 mm² 9.9 x 6 SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4 TVSOP (DGV) 16 23.04 mm² 3.6 x 6.4 VQFN (RGY) 16 14 mm² 4 x 3.5
  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 µA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching
  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 µA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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类型 标题 下载最新的英语版本 日期
* 数据表 TS3V330 数据表 (Rev. C) 2005年 7月 11日
应用手册 防止模拟开关的额外功耗 英语版 2008年 7月 15日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日

设计和开发

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接口适配器

LEADED-ADAPTER1 — 用于快速测试 TI 5、8、10、16 和 24 引脚引线式封装的表面贴装转 DIP 接头适配器

EVM-LEADED1 板可对 TI 的常见引线式封装进行快速测试和电路板试验。该评估板具有足够的空间，可将 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面贴装封装转换为 100mil DIP 接头。     

用户指南: PDF
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接口适配器

LEADLESS-ADAPTER1 — 用于测试 TI 6、8、10、12、14、16 和 20 引脚无引线封装的表面贴装转 DIP 接头适配器

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用户指南: PDF
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参考设计

TIDA-00232 — 无线超低音放大器参考设计

此无线超低音放大器参考设计展示了将无线连接集成到传统模拟输入超低音设计的简易性。由 MSP430 控制有线或无线模式。此参考设计包含具有用于监控和控制的高性能立体声数字音频放大器系统。此设计包含用于在无线模式实现音频流的 CC8520 PurePath 音频无线射频 SoC 模块。提供了参考设计中使用的电路板和 EVM 的原理图、物料清单和设计注意事项。
测试报告: PDF
原理图: PDF
封装 引脚 CAD 符号、封装和 3D 模型
SOIC (D) 16 Ultra Librarian
SSOP (DBQ) 16 Ultra Librarian
TSSOP (PW) 16 Ultra Librarian
TVSOP (DGV) 16 Ultra Librarian
VQFN (RGY) 16 Ultra Librarian
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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