SN74ALS996
- 3-State I/O-Type Read-Back Inputs
- Bus-Structured Pinout
- T/C\ Determines True or Complementary Data at Q Outputs
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (NT) and Ceramic (JT) 300-mil DIPs
These 8-bit latches are designed specifically for storing the contents of the input data bus and providing the capability of reading back the stored data onto the input data bus. The Q outputs are designed with bus-driving capability.
The edge-triggered flip-flops enter the data on the low-to-high
transition of the clock (CLK) input when the enable () input is low. Data can be read
back onto the data inputs by taking the read (
) input low, in addition to having
low. When EN\ is high, both the
read-back and write modes are disabled. Transitions on
should only be made with CLK high
to prevent false clocking.
The polarity of the Q outputs can be controlled by the polarity
(T/C\) input. When T/C\ is high, Q is the same as is stored in the
flip-flops. When T/C\ is low, the output data is inverted. The Q
outputs can be placed in the high-impedance state by taking the
output-enable () input high.
does not
affect the internal operation of the register. Old data can be
retained or new data can be entered while the outputs are off.
A low level at the clear ()
input resets the internal registers low. The clear function is
asynchronous and overrides all other register functions.
The -1 version of the SN74ALS996 is identical to the standard version, except that the recommended maximum IOL for the -1 version is increased to 48 mA. There is no -1 version of the SN54ALS996.
The SN54ALS996 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ALS996 is characterized for operation from 0°C to 70°C.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | 8-Bit D-Type Edge-Triggered Read-Back Latches 数据表 (Rev. B) | 1995年 1月 1日 |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点