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TPSI2240-Q1

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具有增强隔离和雪崩防护功能的汽车级 1200V、50mA 隔离开关

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TPSI2240-Q1

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产品详情

FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Rating Automotive Features 1mA avalanche current, Capacitive isolation Withstand isolation voltage (VISO) (Vrms) 4750 Imax (mA) 50 Ron (typ) (Ω) 130 TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 OFF-state leakage current (µA) 3.5 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000 Working isolation voltage (VIOWM) (Vrms) 1000
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI:
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2240-Q1 IAVA = 1mA for 60s pulses

      • TPSI2240C-Q1 IAVA = 0.6mA for 60s pulses

      • TPSI2240T-Q1 IAVA = 3mA for 60s pulses
    • 1200V standoff voltage
    • RON = 130Ω (TJ = 25°C)
    • TON, TOFF < 700µs
    • IOFF = 1.22µA at 1000V (TJ = 105°C)
  • Low primary side supply current
    • 3.5µA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120VDC working voltage
    • Reinforced Isolation rating, VISO, up to 4750VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.

The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, the VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2240T-Q1) without requiring any external components.
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类型 标题 下载最新的英语版本 日期
* 数据表 TPSI2240-Q1 1200V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection 数据表 (Rev. A) PDF | HTML 2025年 12月 12日
功能安全信息 TPSI2240-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 2025年 12月 11日
证书 TPSI2240Q1EVM EU Declaration of Conformity (DoC) 2025年 7月 1日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

评估板

TPSI2240Q1EVM — TPSI2240-Q1 评估模块

TPSI2240Q1EVM 是包含多个测试点和跳线的硬件评估模块 (EVM)，用于全面评估 TPSI2240-Q1 的性能和功能。该评估模块包含测试和评估 TPSI2240-Q1 器件所需的材料，可以将器件无缝设计到更大型的应用中，如电池管理系统。TPSI2240Q1EVM 可单独使用，也可选择与外部微控制器配对使用，用于驱动器件的使能信号。使用该 EVM 评估诸如电介质耐压测试（又称高压 [HiPot] 测试）和直流快充浪涌电流等应用需求，且无需外部保护元件。此 EVM 组装了采用 SOIC 封装的 TPSI2240-Q1。
用户指南: PDF | HTML
英语版: PDF | HTML
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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