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CSD88537ND

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60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm

Product details

VDS (V) 60 VGS (V) 20 Type N-channel Configuration Dual Rds(on) at VGS=10 V (max) (mΩ) 15 VGSTH typ (typ) (V) 3 QG (typ) (nC) 14 QGD (typ) (nC) 2.3 QGS (typ) (nC) 4.6 ID - silicon limited at TC=25°C (A) 16 ID - package limited (A) 15 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 60 VGS (V) 20 Type N-channel Configuration Dual Rds(on) at VGS=10 V (max) (mΩ) 15 VGSTH typ (typ) (V) 3 QG (typ) (nC) 14 QGD (typ) (nC) 2.3 QGS (typ) (nC) 4.6 ID - silicon limited at TC=25°C (A) 16 ID - package limited (A) 15 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Ultra-Low Qg and Qgd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Ultra-Low Qg and Qgd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.

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Technical documentation

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* Data sheet CSD88537ND Dual 60-V N-Channel NexFET Power MOSFET datasheet (Rev. A) PDF | HTML 25 Aug 2014

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