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DRV8162

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105V max single half-bridge smart gate driver with STO functionality

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Data sheet

DRV8162

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Data sheet Order now

Product details

Rating Automotive Architecture Gate driver Vs (min) (V) 8 Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Vs (min) (V) 8 Operating temperature range (°C) -40 to 125
VSSOP (DGS) 20 24.99 mm² 5.1 x 4.9
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 400ns
  • Robust design for motor phase (SH) switching
    • Slew rate 20V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 400ns
  • Robust design for motor phase (SH) switching
    • Slew rate 20V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.
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* Data sheet DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet (Rev. A) PDF | HTML 03 Jul 2024
White paper 軟體定義車輛將汽車電子的未來推入正軌 (Rev. A) PDF | HTML 31 Oct 2024
White paper 차량용 전자장치의 미래를 바꾸는 소프트웨어 정의 차량 (Rev. A) PDF | HTML 31 Oct 2024
White paper Software-Defined Vehicles Shift the Future of Automotive Electronics Into Gear (Rev. A) PDF | HTML 30 Oct 2024
Design guide 48V, 3.5kW Small Form-Factor Three-Phase Inverter Reference Design for Integrated Motor Drives (Rev. A) PDF | HTML 02 Aug 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV8161EVM — DRV8161 evaluation module

The DRV8161 evaluation module (EVM) is a 30A, three-phase brushless DC drive stage using three DRV8161 gate drivers for spinning BLDC motors. The EVM allows quick evaluation of the DRV8161 device which spins a BLDC motor with trapezoidal commutation and control.
User guide: PDF | HTML
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Reference designs

TIDA-010956 — 48V, 4kW small form-factor three-phase inverter reference design for integrated motor drives

This reference design demonstrates a three-phase inverter with nominal 48V DC input and 85Arms output current rating. The 100V intelligent half-bridge gate driver DRV8162L enables a small size, robust and high efficiency power stage. Multichannel shutdown paths using the split power supply (...)
Design guide: PDF
Reference designs

TIDA-01629 — 48V/500W Three-phase Inverter with Smart Gate Driver Reference Design for Servo Drives

Efficiency, protection, and integration are important design factors for compact DC-fed drives up to 60VDC. This reference design shows a three-phase inverter with nominal 48-V DC input and a 10-ARMS output current.  The 100-V intelligent three-phase gate driver DRV8350R with integrated buck (...)
Design guide: PDF
Schematic: PDF
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VSSOP (DGS) 20 Ultra Librarian
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