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LMG3614

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650-V 170-mΩ GaN FET with integrated driver and protection

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Data sheet

LMG3614

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad

The LMG3614 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3614 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3614 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3614 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3614 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3614 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
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Technical documentation

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* Data sheet LMG3614 650V 170 mΩ GaN FET With Integrated Driver datasheet PDF | HTML 30 Sep 2024
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 28 Nov 2023

Design & development

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Evaluation board

LMG3624EVM-081 — LMG3624 evaluation module for 65-W quasi-resonant flyback converter with USB Type-C® PD

LMG3624EVM-081 demonstrates high efficiency and high density for a 65-W USB Type-C® Power Delivery (PD) off-line adapter using the LMG3624 integrated GaN FET with current-sense emulation. The input supports a universal 90 Vac to 265 Vac and the single output can be set to 5 V, 9 V and 15 V all (...)

User guide: PDF | HTML
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Calculation tool

LMG36XX-CALC — LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
  • LMG3612 — 650-V 120-mΩ GaN FET with integrated driver and protection
  • LMG3614 — 650-V 170-mΩ GaN FET with integrated driver and protection
  • LMG3616 — 650-V 270-mΩ GaN FET with integrated driver and protection
  • LMG3622 — 700V 106mΩ GaN FET with integrated driver and protection
  • LMG3624 — 700V 155mΩ GaN FET with integrated driver, protection and current sensing
  • LMG3626 — 700V 220mΩ GaN FET with integrated driver, protection and current sensing
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VQFN (REQ) 38 Ultra Librarian
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