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LMG3104R011

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100V 1.1mΩ GaN FET with enhanced integrated driver and protection

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Data sheet

LMG3104R011

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Data sheet Order now

Product details

VDS (max) (V) 100 RDS(on) (mΩ) 1.1 ID (max) (A) 180 Features Built-in bootstrap diode, Cycle-by-cycle over-current protection, Overtemperature protection, Shoot-Through Protection, Short-circuit protection, Slew Rate Control, Top-side cooled, Undervoltage protection Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 100 RDS(on) (mΩ) 1.1 ID (max) (A) 180 Features Built-in bootstrap diode, Cycle-by-cycle over-current protection, Overtemperature protection, Shoot-Through Protection, Short-circuit protection, Slew Rate Control, Top-side cooled, Undervoltage protection Rating Catalog Operating temperature range (°C) -40 to 125
VQFN-FCRLF (VBE) 15 26 mm² 6.5 x 4
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling
  • 100V GaN power stage with integrated driver: (GaN FET RDS(ON) options: 1.1mΩ and 1.7mΩ)
  • Integrated high-side level shift and bootstrap
    • Two LMG310xR0xx can form a half-bridge
    • No external level shifter is required
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (7ns)
    • Independent turn-on and turn-off slew-rate control for the GaN FET
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode turn-on (IDM) and turn-off (zero current detection ZCD) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM (LMG3104R0xx)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for overtemperature, supply undervoltage, and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG310xR0xx devices are a family of 100V enhancement-mode Gallium Nitride (GaN) HEMT with integrated high frequency driver. The LMG310xR0xx incorporates a high side level shifter and bootstrap circuit, so that two LMG310xR0xx devices can be used to form a half bridge without an additional level shifter. LMG3104R0xx offers logic input interlock in Independent Input Mode (IIM).

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery, very small input capacitance CISS, and output capacitance COSS. The driver and the GaN FET are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG310xR0xx device is available in a 6.5mm × 4mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
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* Data sheet LMG310xR0xx 100V GaN Power Stage With Integrated Protection and Smart-Switching Features datasheet PDF | HTML 21 May 2026

Design & development

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Evaluation board

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The LMG210XR044 evaluation module is a compact, easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or another converter topology using a half bridge. The device can be used to evaluate the performance of the LMG210XR044 as a (...)
User guide: PDF | HTML
Not available on TI.com
Evaluation board

LMG210XEVM-143 — LMG2104R022 evaluation module

The LMG210XR022 evaluation module (EVM) is a compact, easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or another converter topology using a half-bridge. The EVM can be used to evaluate the performance of the LMG210XR022 as a (...)
User guide: PDF | HTML
Not available on TI.com
Evaluation board

LMG3100EVM-089 — LMG3100 evaluation module

The LMG3100 evaluation module (EVM) is a compact easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter or other converter topology using a half bridge. The EVM features two LMG3100 power modules, each with one 100V 1.7mΩ GaN FET with (...)
User guide: PDF | HTML
Not available on TI.com
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