主页 电源管理 功率级 氮化镓 (GaN) 功率级
主页
电源管理
功率级
氮化镓 (GaN) 功率级

LMG3660R025

预发布

具有集成栅极驱动器的 650V-25mΩ、TOLT 封装 GaN FET

数据表

LMG3660R025

预发布
数据表

产品详情

Rating Catalog Operating temperature range (°C) to
Rating Catalog Operating temperature range (°C) to
  • 650V 25mΩ GaN power FET with integrated gate driver
    • >200V/ns FET hold-off
    • 10V/ns to 80V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates with supply pin and input logic pin voltage range from 9V to 26V
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • LMG3666R025 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters and an adjustable turn-off slew rate from 10V/ns to full speed.
    • LMG3667R025 includes zero-current detection (ZCD) feature that facilitates soft-switching converters and an adjustable turn-off slew rate from 10V/ns to full speed.
  • Top-side cooled 10.1mm × 15.2mm TOLT package separates electrical and thermal paths for lowest power loop inductance
  • 650V 25mΩ GaN power FET with integrated gate driver
    • >200V/ns FET hold-off
    • 10V/ns to 80V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates with supply pin and input logic pin voltage range from 9V to 26V
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • LMG3666R025 includes zero-voltage detection (ZVD) feature that facilitates soft-switching converters and an adjustable turn-off slew rate from 10V/ns to full speed.
    • LMG3667R025 includes zero-current detection (ZCD) feature that facilitates soft-switching converters and an adjustable turn-off slew rate from 10V/ns to full speed.
  • Top-side cooled 10.1mm × 15.2mm TOLT package separates electrical and thermal paths for lowest power loop inductance

The LMG366xR025 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate varies from 10V/ns to 80V/ns, while the turn off slew rate control is available only in LMG3666R025 and LMG3667R025. The turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, and short-circuit and overtemperature protection. The LMG3661R025 provides a 5V LDO output on LDO5V pin that powers external digital isolators. The LMG3666R025 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3667R025 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.

The LMG366xR025 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate varies from 10V/ns to 80V/ns, while the turn off slew rate control is available only in LMG3666R025 and LMG3667R025. The turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, and short-circuit and overtemperature protection. The LMG3661R025 provides a 5V LDO output on LDO5V pin that powers external digital isolators. The LMG3666R025 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3667R025 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.
filter 查找其他 氮化镓 (GaN) 功率级
下载 观看带字幕的视频 视频

技术文档

star =有关此产品的 TI 精选热门文档
未找到结果。请清除搜索并重试。
查看全部 1
顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 LMG366xR025 650V 25 mΩ GaN FET With Integrated Driver and Protection 数据表 PDF | HTML 2026年 3月 4日

设计与开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

参考设计

TIDA-011008 — 基于 GaN 的 3.6kW 单相串式逆变器参考设计

此参考设计概述了如何实现基于 GaN 的单相串式逆变器。该设计由一个串式输入组成，能够处理多达 10 个串联的光伏 (PV) 电池板。从串式输入到 230V 单相电网连接的标称额定功率最高可达 3.6kW。三个功率级的数字控制在单个 C2000™ MCU 上执行。该电路板还具有一个 WiFi® 通信端口，可实现简单的远程监视和控制访问。
设计指南: PDF
适用于评估类项目的 TI 标准条款与条件。

推荐产品可能包含与 TI 此产品相关的参数、评估模块或参考设计。

支持和培训

视频