Home Power management Gate drivers Half-bridge drivers
Home
Power management
Gate drivers
Half-bridge drivers

LM5109B-Q1

ACTIVE

Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

Order now
Data sheet

LM5109B-Q1

ACTIVE
Data sheet Order now

Product details

Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 90 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 14 Peak output current (A) 1 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.03 Rise time (ns) 15 Fall time (ns) 15 Iq (mA) 0.01 Input threshold TTL Channel input logic TTL Switch node voltage (V) -1 Driver configuration Dual inputs
WSON (NGT) 8 16 mm² 4 x 4
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel
    MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A
    Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (2 ns
    Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
filter Find other Half-bridge drivers
Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 13
Type Title Date
* Data sheet LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet (Rev. A) PDF | HTML 08 Dec 2015
Functional safety information LM5109B-Q1 Functional Safety FIT Rate, FMD and Pin FMA PDF | HTML 30 Sep 2024
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25 Mar 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24 Jan 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07 Apr 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 May 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22 Oct 2019
Application note Maximizing DC/DC converter designs with UCC27282 18 Jan 2019
Application note UCC27282 Improving motor drive system robustness 11 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Request
Package Pins CAD symbols, footprints & 3D models
WSON (NGT) 8 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos