The UCC21551x-Q1 is an isolated dual channel
gate driver family with programmable dead time and wide temperature range. The
device is designed with 4A peak-source and 6A peak-sink current to drive power
MOSFET, SiC, and IGBT transistors.
The UCC21551x-Q1 can be configured as two
low-side drivers, two high-side drivers, or a half-bridge driver. The input side is
isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode
transient immunity (CMTI). DFJ28 package offers >5.3mm CH-to-CH creepage to support high voltage
systems.
Protection features include: resistor
programmable dead time, disable feature to shut down both outputs simultaneously,
and integrated de-glitch filter that rejects input transients shorter than 5ns. All
supplies have UVLO protection.
With all these advanced features, the
UCC21551x-Q1 device enables high efficiency,
high power density, and robustness in a wide variety of power
applications.
The UCC21551x-Q1 is an isolated dual channel
gate driver family with programmable dead time and wide temperature range. The
device is designed with 4A peak-source and 6A peak-sink current to drive power
MOSFET, SiC, and IGBT transistors.
The UCC21551x-Q1 can be configured as two
low-side drivers, two high-side drivers, or a half-bridge driver. The input side is
isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode
transient immunity (CMTI). DFJ28 package offers >5.3mm CH-to-CH creepage to support high voltage
systems.
Protection features include: resistor
programmable dead time, disable feature to shut down both outputs simultaneously,
and integrated de-glitch filter that rejects input transients shorter than 5ns. All
supplies have UVLO protection.
With all these advanced features, the
UCC21551x-Q1 device enables high efficiency,
high power density, and robustness in a wide variety of power
applications.