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TPS7H5020-SEP

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耐放射線特性の 1MHz PWM コントローラで、MOSFET または GaN FET を駆動可能

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データシート

TPS7H5020-SEP

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データシート ご注文はこちら

製品詳細

Vin (max) (V) 14 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Flybuck, Forward Rating Space Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Vin (max) (V) 14 Operating temperature range (°C) -55 to 125 Control mode Current Topology Boost, Flyback, Flybuck, Forward Rating Space Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 4.5V to 14V input voltage range for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) in order to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x is a radiation-hardness-assured, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) in order to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.
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種類 タイトル 最新の英語版をダウンロード 日付
* データシート TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver データシート PDF | HTML 2025年 3月 6日
* 放射線と信頼性レポート TPS7H5020-SEP Total Ionizing Dose (TID) Preliminary Report 2025年 3月 4日
EVM ユーザー ガイド (英語) TPS7H5020-SP Evaluation Module PDF | HTML 2025年 3月 7日
セレクション・ガイド TI Space Products (Rev. J) 2024年 2月 12日
アプリケーション・ノート Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
e-Book（PDF） Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計および開発

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評価ボード

TPS7H5020EVM — TPS7H5020-SP evaluation module

The TPS7H5020EVM demonstrates the operation of a single TPS7H5020-SP current-mode PWM controller with integrated gate driver with a GaN FET in a boost configuration. The board provides footprints that can be populated with additional components and test points to allow for testing of customized (...)
ユーザー ガイド: PDF | HTML
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リファレンス・デザイン

PMP23546 — 2.4W multi-output PSR flyback reference design for bias supplies

This reference design uses TPS7H5020-SEP as a primary-side regulated (PSR) flyback converter. The input accepts a 22V to 36V range to generate a 12V bias referenced to primary ground and another 12V output that can be referenced to another return. This reference design can be used to provide bias (...)
試験報告書: PDF
パッケージ ピン数 CAD シンボル、フットプリント、および 3D モデル
HTSSOP (PWP) 24 Ultra Librarian
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購入と品質

記載されている情報：
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  • REACH
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  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
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