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LMG1020-Q1

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Automotive 7A and 5A single-channel gate driver with 5V UVLO for nano second input pulses

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Data sheet

LMG1020-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (µs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
DSBGA (YBV) 6 1.1049 mm² 0.87 x 1.27
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.
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* Data sheet LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications datasheet PDF | HTML 29 Apr 2025

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LMG1020EVM-006 — LMG1020 GaN Low-side Driver + GaN FET LiDAR Evaluation Module

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
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