The UCC21330-Q1 is an isolated dual channel gate driver family with
programmable dead time and wide temperature range. It is designed with 4A
peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT
transistors.
The UCC21330-Q1 can be configured as two low-side drivers, two high-side
drivers, or a half-bridge driver. The input side is isolated from the two output
drivers by a 3kVRMS isolation barrier, with a
minimum of 125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor
programmable dead time, disable feature to shut down both outputs simultaneously,
and integrated de-glitch filter that rejects input transients shorter than 5ns. All
supplies have UVLO protection.
With all these advanced features, the
UCC21330-Q1 device enables high efficiency, high
power density, and robustness in a wide variety of power applications.
The UCC21330-Q1 is an isolated dual channel gate driver family with
programmable dead time and wide temperature range. It is designed with 4A
peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT
transistors.
The UCC21330-Q1 can be configured as two low-side drivers, two high-side
drivers, or a half-bridge driver. The input side is isolated from the two output
drivers by a 3kVRMS isolation barrier, with a
minimum of 125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor
programmable dead time, disable feature to shut down both outputs simultaneously,
and integrated de-glitch filter that rejects input transients shorter than 5ns. All
supplies have UVLO protection.
With all these advanced features, the
UCC21330-Q1 device enables high efficiency, high
power density, and robustness in a wide variety of power applications.