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UCC21710-Q1
Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC
Data sheet
UCC21710-Q1
- 5.7kVRMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- SiC MOSFETs and IGBTs up to 2121Vpk
- 33V maximum output drive voltage (VDD-VEE)
- ±10A drive strength and split output
- 150V/ns minimum CMTI
- 270ns response time fast overcurrent protection
- 4A internal active miller clamp
- 400mA soft turn-off when fault happens
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Reject <40ns noise transient and pulse on input pins
- 12V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
- 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
- Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program
The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710-Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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Evaluation board
UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules
The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
User guide: PDF
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
PMP23223 — Smart isolated gate driver with bias supply reference design
This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
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