The UCC218302-Q1 is a galvanically isolated single-channel gate
driver with advanced protection features, best-in-class dynamic performance, and
robustness designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage. The
UCC218302-Q1 has
dual outputs up to ±10A and ±5A peak source and
sink current.
The input side is isolated from the
output side with SiO2 isolation technology, supporting up to
1.06kVRMS working voltage and 10kVPK surge immunity. The isolation barrier also provides low part-to-part skew, and
>500V/ns common-mode noise immunity (CMTI).
The UCC218302-Q1 includes state-of-art protection features such as fast overcurrent and
short-circuit detection, controlled soft shutdown after a fault, fault reporting,
active Miller clamp, input and output side power supply UVLO to optimize SiC and
IGBT switching behavior and robustness, active short circuit input on the
secondary side, and
output voltage gate monitoring.
The UCC218302-Q1 is a galvanically isolated single-channel gate
driver with advanced protection features, best-in-class dynamic performance, and
robustness designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage. The
UCC218302-Q1 has
dual outputs up to ±10A and ±5A peak source and
sink current.
The input side is isolated from the
output side with SiO2 isolation technology, supporting up to
1.06kVRMS working voltage and 10kVPK surge immunity. The isolation barrier also provides low part-to-part skew, and
>500V/ns common-mode noise immunity (CMTI).
The UCC218302-Q1 includes state-of-art protection features such as fast overcurrent and
short-circuit detection, controlled soft shutdown after a fault, fault reporting,
active Miller clamp, input and output side power supply UVLO to optimize SiC and
IGBT switching behavior and robustness, active short circuit input on the
secondary side, and
output voltage gate monitoring.