LP2998-Q1
- AEC-Q100 Test Guidance with the following results
(SO PowerPAD-8):- Device HBM ESD Classification Level H1C
- Junction Temperature Range –40°C to 125°C
- 1.35 V Minimum VDDQ
- Source and Sink Current
- Low Output Voltage Offset
- No External Resistors Required
- Linear Topology
- Suspend to Ram (STR) Functionality
- Low External Component Count
- Thermal Shutdown
The LP2998 linear regulator is designed to meet JEDEC SSTL-2 and JEDEC SSTL-18 specifications for termination of DDR-SDRAM and DDR2 memory. The device also supports DDR3 and DDR3L VTT bus termination with VDDQ min of 1.35 V. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5 A continuous current and transient peaks up to 3 A in the application as required for DDR-SDRAM termination. The LP2998 also incorporates a VSENSE pin to provide superior load regulation and a VREF output as a reference for the chipset and DIMMs.
An additional feature found on the LP2998 is an active low shutdown (SD) pin that provides Suspend To RAM (STR) functionality. When SD is pulled low the VTT output will tri-state providing a high impedance output, but, VREF will remain active. A power savings advantage can be obtained in this mode through lower quiescent current.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | LP2998/LP2998-Q1 DDR Termination Regulator 数据表 (Rev. K) | PDF | HTML | 2014年 8月 20日 | ||
EVM 用户指南 | AN-1813 LP2998 Evaluation Board (Rev. A) | 2013年 5月 7日 |
设计和开发
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LP2998EVAL — 用于 LP2998 的评估板
The LP2998 evaluation board is designed to provide the design Engineer with a fully functional prototype system in which to evaluate the LP2998 in both a static environment and with a complete memory system.
TIDA-00275 — 汽车仪表板宽输入电压电源设计
封装 | 引脚 | CAD 符号、封装和 3D 模型 |
---|---|---|
HSOIC (DDA) | 8 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点
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