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TPS7H5021-SEP

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Radiation-tolerant 50% duty cycle PWM controller for driving MOSFET or GaN FETs

TPS7H5021-SEP

ACTIVE

Product details

Topology Boost, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 50
Topology Boost, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 50
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

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Technical documentation

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* Data sheet TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. C) PDF | HTML 26 Feb 2026
* Radiation & reliability report TPS7H5021-SEP Production Flow and Reliability Report PDF | HTML 17 Feb 2026
* Radiation & reliability report TPS7H5021-SEP Total Ionizing Dose (TID) Report 17 Feb 2026
* Radiation & reliability report TPS7H5021-SEP and TPS7H5021-SP QMLP Neutron Displacement Damage (NDD) Characterization 17 Feb 2026
* Radiation & reliability report TPS7H5020-SEP and TPS7H5021-SEP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML 13 Feb 2026
Selection guide TI Space Products (Rev. K) 04 Apr 2025
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 11 Jan 2024
Technical article 우주 항공 강화 제품이 저지구 궤도 애플리케이션의 과제를 해결하는 방법 (Rev. A) PDF | HTML 11 Jan 2024
Technical article How Space Enhanced Products Address Challenges in low Earth orbit Applications (Rev. A) PDF | HTML 18 Dec 2023
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 15 Sep 2022
E-book Radiation Handbook for Electronics (Rev. A) 21 May 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TPS7H5020EVM — TPS7H5020-SP evaluation module

The TPS7H5020EVM demonstrates the operation of a single TPS7H5020-SP current-mode PWM controller with integrated gate driver with a GaN FET in a boost configuration. The board provides footprints that can be populated with additional components and test points to allow for testing of customized (...)
User guide: PDF | HTML
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Simulation model

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
Simulation model

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
Package Pins CAD symbols, footprints & 3D models
HTSSOP (PWP) 24 Ultra Librarian

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