The UCC218915-Q1 is a
galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs
up to 1500V DC operating voltage with advanced protection features, best-in-class
dynamic performance, and robustness. The UCC218915-Q1
has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.
The input side is
isolated from the output side with SiO2 isolation technology, supporting
up to 1.06kVRMS working voltage, 10kVPK surge immunity with
longer than 40-years isolation barrier life, as well as providing low part-to-part
skew, and >200V/ns common mode noise immunity (CMTI).
The UCC218915-Q1
includes state-of-art protection features, such as fast overcurrent and short
circuit detection, controlled soft shutdown after a fault, fault reporting, active
Miller clamp, active short circuit input on the high-voltage side and input and
output side power supply UVLO to optimize SiC and IGBT switching behavior and
robustness.
The UCC218915-Q1 is a
galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs
up to 1500V DC operating voltage with advanced protection features, best-in-class
dynamic performance, and robustness. The UCC218915-Q1
has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.
The input side is
isolated from the output side with SiO2 isolation technology, supporting
up to 1.06kVRMS working voltage, 10kVPK surge immunity with
longer than 40-years isolation barrier life, as well as providing low part-to-part
skew, and >200V/ns common mode noise immunity (CMTI).
The UCC218915-Q1
includes state-of-art protection features, such as fast overcurrent and short
circuit detection, controlled soft shutdown after a fault, fault reporting, active
Miller clamp, active short circuit input on the high-voltage side and input and
output side power supply UVLO to optimize SiC and IGBT switching behavior and
robustness.