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TPS7H6025-SEP

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耐辐射、22V 半桥 GaN 栅极驱动器

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TPS7H6025-SEP

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产品详情

Bootstrap supply voltage (max) (V) 22 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 22 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
HTSSOP (DCA) 56 113.4 mm² 14 x 8.1
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package, and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package, and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
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* 数据表 TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 数据表 PDF | HTML 2024年 6月 28日

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评估板

TPS7H6025EVM — TPS7H6025 评估模块

TPS7H6025EVM 用户指南提供了操作 TPS7H6025 评估模块的全面说明。默认情况下，该评估模块设置为在脉宽调制模式下与 TPS7H6025-SEP 一起运行。该模式接受一个开关信号作为输入，并在内部生成互补信号。这可以更改为器件的独立输入模式，在该模式下，两个输出彼此独立工作。
用户指南: PDF | HTML
英语版 (Rev.B): PDF | HTML
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ALPHA-3P-ADM-VA601-SPACE-AMD — 采用 AMD Versal Core XQRVC1902 ACAP 和 TI 抗辐射产品的 Alpha Data ADM-VA601 套件

具有 6U VPX 外形，突出了 AMD-Xilinx® Versal AI Core XQRVC1902 自适应 SoC/FPGA。ADM-VA600 采用模块化板设计，带有一个 FMC+ 连接器、DDR4 DRAM 和系统监控功能。大多数元件是耐辐射电源管理、接口、时钟和嵌入式处理 (-SEP) 器件。

来源：Alpha Data Parallel Systems Ltd.
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包含信息：
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  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
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  • 持续可靠性监测
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