Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 4.4 Peak output current (source) (typ) (A) 4.3 Peak output current (sink) (typ) (A) 4.4 Features Emitter-referenced UVLO, Split output Output VCC/VDD (min) (V) 13.2 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.06 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Rise time (ns) 12 Fall time (ns) 10 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Basic, Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 700, 1500 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 4.4 Peak output current (source) (typ) (A) 4.3 Peak output current (sink) (typ) (A) 4.4 Features Emitter-referenced UVLO, Split output Output VCC/VDD (min) (V) 13.2 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.06 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive, Catalog Rise time (ns) 12 Fall time (ns) 10 Undervoltage lockout (typ) (V) 12