Number of channels 1 Isolation rating Basic, Reinforced Power switch GaNFET, IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 990, 2121 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12
Number of channels 1 Isolation rating Basic, Reinforced Power switch GaNFET, IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000, 5000 Working isolation voltage (VIOWM) (Vrms) 990, 2121 Transient isolation voltage (VIOTM) (VPK) 4242, 7000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Split output Output VCC/VDD (min) (V) 9.5 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 15 Propagation delay time (µs) 0.065 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 10 Fall time (ns) 10 Undervoltage lockout (typ) (V) 8, 12