Calculation tool
SLVC789 — LM76202-Q1 and LM74202-Q1 Design Calculator
Spreadsheet calculator helpful in selecting the design parameters for the desired application.
Data sheet
LM74202-Q1
- AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C ≤ TA ≤ +125°C
- AEC-Q100-012 short circuit reliability Grade A
- HBM ESD classification level 2
- CDM ESD classification level C6
- 4.2-V to 40-V operating voltage, 42-V maximum
- Integrated reverse input polarity protection down to –40 V
- Integrated back-to-back MOSFETs with 150 mΩ total RON
- Transient immunity up-to 55 V
- 0.1-A to 2.23-A adjustable current limit
(±5% accuracy at 1 A) - Load protection during ISO7637 and ISO16750-2 testing
- Short to battery and short to ground protection
- Reverse current blocking for protection from output short to battery
- IMON current indicator output (±8.5% accuracy)
- Low quiescent current (285 µA in operating, 16 µA in shutdown)
- Adjustable UVLO, OVP cut off, inrush current control
- Selectable current-limiting fault response options (auto-retry, latch off, CB modes)
- Available in easy to use 16-Pin HTSSOP package
The LM74202-Q1 device is a compact, feature-rich 40-V integrated ideal diode with a full suite of protection features. The wide supply input range allows control of 12-V automotive battery driven applications. The device withstands and protects the loads from positive and negative supply voltages up to ±40 V. Load, source and device protection are provided with many programmable features including overcurrent, inrush current control, overvoltage and undervoltage thresholds. The internal robust protection control blocks along with the 40-V rating of the device simplifies the system design for ISO standard pulse tesing.
A shutdown pin provides external control for enabling and disabling the internal FETs and places the device in a low current shutdown mode. For system status monitoring and downstream load control, the device provides fault output and precise current monitor output. The MODE pin allows flexibility to configure the device between the three current-limiting fault responses (circuit breaker, latch off, and auto-retry modes). The device monitors V(IN) and V(OUT) to provide reverse current blocking when V(IN) < (V(OUT)-10mV). This function protects system bus from overvoltages during output short to battery faults and also helps in voltage holdup requirements during power fail and brownout conditions.
The device is available in a 5 mm × 4.4 mm 16-pin HTSSOP and is fully specified over a –40°C to +125°C temperature range.
Similar products you might be interested in
Pin-for-pin with same functionality to the compared device
Technical documentation
No results found. Please clear your search and try again.
View all 3 | Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LM74202-Q1 40-V, 2.2-A Integrated Ideal Diode with Overvoltage and Overcurrent Protection datasheet | PDF | HTML | 27 Jun 2019 |
| Application note | Basics of Ideal Diodes (Rev. B) | PDF | HTML | 05 Oct 2021 | |
| Application brief | Plug and Play Automotive Protection with Integrated FET Ideal Diode - LM76202-Q1 | 07 Jun 2019 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
LM76202-Q1EVM — LM76202-Q1 Ideal diode evaluation module
The LM76202-Q1EVM allows reference circuit evaluation of TI's LM76202-Q1 and LM74202-Q1 ideal diodes. The LM76202-Q1 device is 4.5 V to 60 V, 2.23-A ideal diode and the LM74202-Q1 device is 4.5 V to 40 V, 2.23-A ideal diode. Both devices have reverse battery protection, overvoltage, (...)
User guide: PDF
Simulation tool
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs
PMP41078 — High-voltage to low-voltage DC-DC converter reference design with GaN HEMT
This reference design describes a 3.5kW highvoltage to low-voltage DC-DC converter with 650V Gallium nitride (GaN) high-electron mobility transistors (HEMT). Using LMG3522R030 as primary switches makes the converter work at a high switching frequency. In this design, the converter uses a smaller (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| HTSSOP (PWP) | 16 | Ultra Librarian |
Ordering & quality
Information included:
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Information included:
- Fab location
- Assembly location
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.