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UCC21530-Q1

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Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

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UCC21551-Q1 ACTIVE Automotive, 4A/6A 5kVRMS dual-channel isolated gate driver with EN and DT pins for IGBT and SiC Tighter VCCI range supporting digital controller thresholds. New DT equation. Increased CMTI and wider operating temperature range.

UCC21530-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
Number of channels 2 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, MOSFET, SiCFET Peak output current (A) 6 Features Enable, Programmable dead time Output VCC/VDD (max) (V) 25 Output VCC/VDD (min) (V) 14.7 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 18 Propagation delay time (µs) 0.019 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 6 Fall time (ns) 7 Undervoltage lockout (typ) (V) 8, 12
SOIC (DWK) 14 106.09 mm² 10.3 x 10.3
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C
  • AEC-Q100 qualified with:
    • Device temperature grade 1
  • Functional Safety Quality-Managed
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Wide body SOIC-14 (DWK) package
  • 3.3mm spacing between driver channels
  • Switching parameters:
    • 33ns typical propagation delay
    • 20ns minimum pulse width
    • 6ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • 4A peak source, 6A peak sink output
  • TTL and CMOS compatible inputs
  • 3V to 18V input VCCI range
  • Up to 25V VDD output drive supply
    • 8V,12V and 17V VDD UVLO options
  • Programmable overlap and dead time
  • Junction temperature range –40 to +150°C

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.
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Technical documentation

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Type Title Date
* Data sheet UCC21530-Q1 4A, 6A, 5.7kVRMS Isolated Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing datasheet (Rev. F) PDF | HTML 17 Sep 2024
White paper 신뢰할 수 있는 합리적 가격대의 절연 기술 개발과 관련한 고전압 설계 문제의 해결 (Rev. C) PDF | HTML 16 May 2024
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) PDF | HTML 07 Mar 2024
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Impact of Narrow Pulse Widths in Gate Driver Circuits (Rev. A) PDF | HTML 25 Jan 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 Sep 2023
Certificate UCC21540 CQC Certificate of Product Certification 17 Aug 2023
Certificate UCC215xx CQC Certificate of Product Certification 17 Aug 2023
Certificate UL Certification E181974 Vol 4. Sec 7 (Rev. C) 02 Dec 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate CSA Product Certificate (Rev. A) 15 Aug 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 Feb 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21530EVM-286 — UCC21530 isolated dual-channel driver evaluation module

UCC21530EVM-286 is designed for evaluating UCC21530DWK, which is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current, 12V UVLO, Enable (Active High) Function and 3.3 mm creepage between channels . This EVM could be served as a reference design for driving IGBTS and SiC (...)
User guide: PDF | HTML
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Driver or library

UCC21520-Q1-DESIGN — UCC21520-Q1 design resources

FuSa supporting document
Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21520-Q1 — Automotive 4-A, 6-A, 5.7-kVRMS isolated dual-channel gate driver with dual input, disable, deadtime UCC21530-Q1 — Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC
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Driver or library

UCC21530-Q1-DESIGN — UCC21530-Q1 design resources

FS documents
Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21530-Q1 — Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC
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Simulation model

UCC21530 PSpice Transient Model

SLUM655.ZIP (23 KB) - PSpice Model
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

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Design guide: PDF
Reference designs

TIDM-02009 — ASIL D safety concept-assessed high-speed traction, bi-directional DC/DC conversion reference design

This reference design demonstrates control of HEV/EV traction inverter and bi-directional DC-DC converter by a single TMS320F28388D real-time C2000™ MCU. The traction control uses a software-based resolver to digital converter (RDC) driving the motor to a high speed up to 20,000 RPM. The (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDA-01605 — Automotive Dual Channel SiC MOSFET Gate Driver Reference Design with Two Level Turn-off Protection

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDM-02002 — Bidirectional CLLLC resonant dual active bridge (DAB) reference design for HEV/EV onboard charger

CLLLC resonant DAB with bidirectional power flow capability and soft switching characteristics is an ideal candidate for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) on-board chargers and energy storage applications. This design illustrates control of this power topology using a C2000™ (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP21999 — 6.6 kW, bi-directional CLLLC resonant converter reference design using PCB winding transformer

This 6.6 kW, bi-directional, dual-active-bridge resonant converter reference design allows 380 VDC to 600 VDC input and 280 VDC to 450 VDC output. PCB winding transformer and Rogowski coil synchronous rectifier (SR) control are applied in this design for power density and efficiency optimization. (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP21561 — Safety isolated secondary SiC MOSFET driver reference design

This reference design provides an integrated high and low side isolated secondary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Schematic: PDF
Reference designs

PMP21553 — Safety isolated primary SiC MOSFET driver reference design

This reference design provides an integrated high and low side isolated primary gate driver solution for an automotive battery charging system incorporating two push-pull SN6505B transformer drivers and the isolated dual-channel gate driver UCC21521C.
Test report: PDF
Schematic: PDF
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