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LMG2652

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650V, 140mΩ GaN half-bridge with integrated driver, protection and current sense

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Data sheet

LMG2652

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 140 ID (max) (A) 6.1 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 140 ID (max) (A) 6.1 Features Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (RFB) 19 48 mm² 8 x 6
  • 650V GaN power-FET half bridge
  • 140mΩ low-side and high-side GaN FETs
  • Integrated gate drivers with <100ns low propagation delays
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
  • Low-side (INL) / high-side (INH) gate-drive interlock
  • High-side (INH) gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up: <8µs
  • Low-side / high-side cycle-by-cycle overcurrent protection
  • Overtemperature protection
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 70µA
  • 8mm × 6mm QFN package with dual thermal pads
  • 650V GaN power-FET half bridge
  • 140mΩ low-side and high-side GaN FETs
  • Integrated gate drivers with <100ns low propagation delays
  • Current-sense emulation with high-bandwidth and high accuracy
  • Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
  • Low-side (INL) / high-side (INH) gate-drive interlock
  • High-side (INH) gate-drive signal level shifter
  • Smart-switched bootstrap diode function
  • High-side start up: <8µs
  • Low-side / high-side cycle-by-cycle overcurrent protection
  • Overtemperature protection
  • AUX idle quiescent current: 250µA
  • AUX standby quiescent current: 50µA
  • BST idle quiescent current: 70µA
  • 8mm × 6mm QFN package with dual thermal pads

The LMG2652 is a 650V 140mΩ GaN power-FET half bridge. The LMG2652 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2652 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

The LMG2652 is a 650V 140mΩ GaN power-FET half bridge. The LMG2652 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2652 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.
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* Data sheet LMG2652 650V 140 mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation datasheet PDF | HTML 31 Jan 2025
EVM User's guide LMG2652 Half-Bridge Daughtercard Evaluation Module User's Guide PDF | HTML 18 Dec 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Daughter card

LMG2652EVM-101 — LMG2652 daughter card

The LMG2652 daughter card is designed to provide a quick and easy platform to evaluate TI integrated GaN devices in any half-bridge topology. The board is designed to be interfaced with a larger system using the 6 power pins and 12 digital pins on the bottom edge of the board in a socket style (...)

User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
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