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LMG2104R022
100V 2.2mΩ half-bridge GaN FET with enhanced integrated driver and protection
Data sheet
LMG2104R022
- GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)
- Efficient and high-density power conversion with
- Ultra-low propagation delay (20ns) and matching (2ns)
- Independent turn-on and turn-off slew-rate control for both the GaN FETs
- Zero-voltage detection (ZVD) reporting for dead-time optimization
- Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application
- Input control flexibility
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead time option for IO-limited controllers
- Robust protection
- Interlock protection in IIM mode (LMG2104)
- Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
- VDS monitoring based cycle-by-cycle short-circuit protection
- Fault indication for over-temperature, supply under-voltage and short-circuit events
- External bias power supply: 5V
- Supports 3.3V and 5V input logic levels
- Parasitic optimized QFN package with exposed top pad to support top-side cooling
The LMG210xR0xx device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the VCC voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
Technical documentation
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View all 3 | Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | LMG210xR0xx 100V GaN Half-Bridge Power Stage With Integrated Protection and Smart-Switching Features datasheet | PDF | HTML | 19 May 2026 |
| EVM User's guide | LMG210XR22 Evaluation Module (Rev. A) | PDF | HTML | 30 Oct 2025 | |
| Certificate | LMG210XEVM-143 EU Declaration of Conformity (DoC) | 18 Sep 2025 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
Evaluation board
LMG210XEVM-121 — LMG2104R044 evaluation module
The LMG210XR044 evaluation module is a compact, easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or another converter topology using a half bridge. The device can be used to evaluate the performance of the LMG210XR044 as a (...)
Evaluation board
LMG210XEVM-143 — LMG2104R022 evaluation module
The LMG210XR022 evaluation module (EVM) is a compact, easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or another converter topology using a half-bridge. The EVM can be used to evaluate the performance of the LMG210XR022 as a (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN-FCRLF (VBN) | 18 | Ultra Librarian |
Ordering & quality
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