Calculation tool
LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator
Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
LMG3411R150
600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Data sheet
LMG3411R150
- TI GaN process qualified through accelerated reliability in-application hard-switching profiles
- Enables high-density power conversion designs
- Superior system performance over cascode or stand-alone GaN FETs
- Low inductance 8 mm × 8 mm QFN package for ease of design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- Only +12 V of unregulated supply needed
- Integrated gate driver
- Zero common source inductance
- 20-ns propagation delay for high-frequency design
- Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
- 25-V/ns to 100-V/ns adjustable slew rate
- Robust protection
- Requires no external protection components
- Overcurrent protection with <100 ns response
- Greater than 150-V/ns slew rate immunity
- Transient overvoltage immunity
- Overtemperature protection
- Undervoltage lockout (UVLO) protection on all supply rails
- Device Options:
- LMG3410R150: Latched overcurrent protection
- LMG3411R150: Cycle-by-cycle overcurrent proection
The LMG341xR150 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The inherent advantages of this device over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero VDS ringing, less than 100-ns current limiting response self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
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Technical documentation
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Evaluation board
LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family
The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
User guide: PDF
Daughter card
LMG3411EVM-031 — LMG3411R150 600-V 150-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card
LMG3411EVM-031 configures two LMG3411R150 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
User guide: PDF
Calculation tool
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Calculation tool
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Reference designs
TIDA-00915 — Three-phase, 1.25-kW, 200-VAC small form factor GaN inverter reference design for integrated drives
This reference design is a three-phase inverter with a continuous power rating of 1.25 kW at 50°C ambient and 550 W at 85°C ambient for driving 200-V AC servo motors. It features 600-V LMG3411R150 Gallium Nitride (GaN) power modules with an integrated FET and gate driver mounted on an (...)
Reference designs
PMP22538 — 60-W GaN PFC flyback reference design
This reference design uses UCC28811 power factor correction (PFC) flyback controller to create an isolated 60-V output capable of 1-A loading while keeping input harmonic distortion low. The high efficiency of using LMG3411R150 GaN primary switch allows for compact size and low-temperature rise (...)
Test report: PDF
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (RWH) | 32 | Ultra Librarian |
Ordering & quality
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