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CSD25501F3

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-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

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Data sheet

CSD25501F3

ACTIVE
Data sheet Order now

Product details

VDS (V) -20 VGS (V) -20 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 76 Rds(on) at VGS=2.5 V (max) (mΩ) 125 VGSTH typ (typ) (V) -0.75 QG (typ) (nC) 1.02 QGD (typ) (nC) 0.09 QGS (typ) (nC) 0.45 ID - silicon limited at TC=25°C (A) 3.6 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) -20 VGS (V) -20 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 76 Rds(on) at VGS=2.5 V (max) (mΩ) 125 VGSTH typ (typ) (V) -0.75 QG (typ) (nC) 1.02 QGD (typ) (nC) 0.09 QGS (typ) (nC) 0.45 ID - silicon limited at TC=25°C (A) 3.6 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJN) 3 0.414 mm² 0.69 x 0.6
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.7mm × 0.6mm
  • Low profile
    • 0.22mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.7mm × 0.6mm
  • Low profile
    • 0.22mm max height
  • Integrated ESD protection diode
  • Lead and halogen free
  • RoHS compliant

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.
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Technical documentation

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Type Title Date
* Data sheet CSD25501F3 –20V P-Channel FemtoFET™ MOSFET datasheet (Rev. C) PDF | HTML 24 Jun 2024
Application note MOSFET Support and Training Tools (Rev. F) PDF | HTML 14 Jun 2024
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016

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Supported products & hardware

Supported products & hardware

Products
MOSFETs
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CSD17301Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3 mOhm CSD17302Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9 mOhm CSD17303Q5 — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm CSD17304Q3 — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm CSD17305Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.6 mOhm CSD17306Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm CSD17307Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.1 mOhm CSD17308Q3 — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm CSD17309Q3 — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm CSD17310Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm CSD17311Q5 — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm CSD17312Q5 — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.7 mOhm CSD17313Q2 — 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm CSD17318Q2 — 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm CSD17322Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12.4 mOhm CSD17327Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.5 mOhm CSD17381F4 — 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection CSD17382F4 — 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection CSD17483F4 — 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection CSD17484F4 — 30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection CSD17501Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm CSD17505Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm CSD17506Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4 mOhm CSD17507Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm CSD17510Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.2 mOhm CSD17522Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm CSD17527Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm CSD17551Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm CSD17551Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.8 mOhm CSD17552Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm CSD17552Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.2 mOhm CSD17553Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.1 mOhm CSD17555Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.7 mOhm CSD17556Q5B — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm CSD17559Q5 — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm CSD17570Q5B — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm CSD17571Q2 — 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm CSD17573Q5B — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm CSD17575Q3 — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm CSD17576Q5B — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm CSD17577Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.4 mOhm CSD17577Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm CSD17578Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.4 mOhm CSD17578Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm CSD17579Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm CSD17579Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm CSD17581Q3A — 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm CSD17581Q5A — 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm CSD17585F5 — 30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection CSD18501Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm CSD18502KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 2.9 mOhm CSD18502Q5B — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm CSD18503KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 4.5 mOhm CSD18503Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm CSD18504KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm CSD18504Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.6 mOhm CSD18509Q5B — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm CSD18510KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 1.7 mOhm CSD18510KTT — 40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm CSD18510Q5B — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm CSD18511KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 2.6 mOhm CSD18511KTT — 40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm CSD18511Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm CSD18512Q5B — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm CSD18513Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm CSD18514Q5A — 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm CSD18531Q5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm CSD18532KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 4.2 mOhm CSD18532NQ5B — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm CSD18532Q5B — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm CSD18533KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 6.3 mOhm CSD18533Q5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm CSD18534KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 9.5 mOhm CSD18534Q5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.8 mOhm CSD18535KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm CSD18535KTT — 60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm CSD18536KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 1.6 mOhm CSD18536KTT — 60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm CSD18537NKCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm CSD18537NQ5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13 mOhm CSD18540Q5B — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm CSD18541F5 — 60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection CSD18542KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 4 mOhm CSD18542KTT — 60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm CSD18543Q3A — 60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm CSD18563Q5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm CSD19501KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm CSD19502Q5B — 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm CSD19503KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm CSD19505KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 3.1 mOhm CSD19505KTT — 80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm CSD19506KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm CSD19506KTT — 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm CSD19531KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 7.7 mOhm CSD19531Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm CSD19532KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm CSD19532Q5B — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm CSD19533KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm CSD19533Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm CSD19534KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 16.5 mOhm CSD19534Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm CSD19535KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm CSD19535KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm CSD19536KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm CSD19536KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm CSD19537Q3 — 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm CSD19538Q2 — 100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm CSD19538Q3A — 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm CSD22202W15 — -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection CSD22204W — -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection CSD22205L — -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection CSD22206W — -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection CSD23202W10 — -12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection CSD23203W — -8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection CSD23280F3 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection CSD23285F5 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection CSD23381F4 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection CSD23382F4 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection CSD25202W15 — -20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection CSD25211W1015 — -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection CSD25213W10 — -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection CSD25304W1015 — -20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm CSD25310Q2 — -20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm CSD25402Q3A — -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm CSD25404Q3 — -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm CSD25480F3 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection CSD25481F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection CSD25483F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection CSD25484F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection CSD25485F5 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection CSD25501F3 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
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Reference designs

TIDA-010070 — Protected DC-bus input power and control power supply reference design for low-voltage servo drives

This reference design uses an ORing controller, the LM5050-1 to provide protection against reverse polarity and reverse current. In conjunction, the LM5069 hot swap controller is used for overcurrent, over voltage, under voltage protection, and inrush current limitation. The design also features (...)
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Schematic: PDF
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