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CSD25483F4

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection

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Data sheet

CSD25483F4

ACTIVE
Data sheet Order now

Product details

VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 245 Rds(on) at VGS=2.5 V (max) (mΩ) 390 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.96 QGD (typ) (nC) 0.16 QGS (typ) (nC) 0.25 ID - silicon limited at TC=25°C (A) 1.6 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 245 Rds(on) at VGS=2.5 V (max) (mΩ) 390 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.96 QGD (typ) (nC) 0.16 QGS (typ) (nC) 0.25 ID - silicon limited at TC=25°C (A) 1.6 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • Maximum height: 0.36-mm
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • Maximum height: 0.36-mm
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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CSD25481F4 ACTIVE -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection Lower resistance

Technical documentation

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Type Title Date
* Data sheet CSD25483F4 20-V P-Channel FemtoFET™ MOSFET datasheet (Rev. F) PDF | HTML 10 Mar 2022
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

LOAD-SWITCH-FET-LOSS-CALC — Power Loss Calculation Tool for Load Switch

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware

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  • CSD18503KCS — 40-V, N channel NexFET™ power MOSFET, single TO-220, 4.5 mOhm
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  • CSD18537NKCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm
  • CSD18537NQ5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13 mOhm
  • CSD18540Q5B — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
  • CSD18541F5 — 60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection
  • CSD18542KCS — 60-V, N channel NexFET™ power MOSFET, single TO-220, 4 mOhm
  • CSD18542KTT — 60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm
  • CSD18543Q3A — 60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm
  • CSD18563Q5A — 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.8 mOhm
  • CSD19501KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm
  • CSD19502Q5B — 80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm
  • CSD19503KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm
  • CSD19505KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 3.1 mOhm
  • CSD19505KTT — 80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm
  • CSD19506KCS — 80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm
  • CSD19506KTT — 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm
  • CSD19531KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 7.7 mOhm
  • CSD19531Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm
  • CSD19532KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm
  • CSD19532Q5B — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm
  • CSD19533KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 10.5 mOhm
  • CSD19533Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.5 mOhm
  • CSD19534KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 16.5 mOhm
  • CSD19534Q5A — 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm
  • CSD19535KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 3.6 mOhm
  • CSD19535KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm
  • CSD19536KCS — 100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm
  • CSD19536KTT — 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm
  • CSD19537Q3 — 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm
  • CSD19538Q2 — 100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm
  • CSD19538Q3A — 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm
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  • CSD22204W — -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection
  • CSD22205L — -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection
  • CSD22206W — -8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection
  • CSD23202W10 — -12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
  • CSD23203W — -8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection
  • CSD23280F3 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection
  • CSD23285F5 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection
  • CSD23381F4 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection
  • CSD23382F4 — -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection
  • CSD25202W15 — -20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection
  • CSD25211W1015 — -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection
  • CSD25213W10 — -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection
  • CSD25304W1015 — -20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm
  • CSD25310Q2 — -20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm
  • CSD25402Q3A — -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm
  • CSD25404Q3 — -20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm
  • CSD25480F3 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection
  • CSD25481F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection
  • CSD25483F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection
  • CSD25484F4 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection
  • CSD25485F5 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection
  • CSD25501F3 — -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
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Simulation model

CSD25483F4 TINA-TI Spice Model

SLPM239.ZIP (4 KB) - TINA-TI Spice Model
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Simulation model

CSD25483F4 Unencrypted PSpice Model (Rev. B)

SLPM090B.ZIP (3 KB) - PSpice Model
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Package Pins CAD symbols, footprints & 3D models
PICOSTAR (YJC) 3 Ultra Librarian
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