CSD25483F4
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection
Data sheet
CSD25483F4
- Ultra-low on-resistance
- Ultra-low Qg and Qgd
- High operating drain current
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- Maximum height: 0.36-mm
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
This 210-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Technical documentation
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View all 9 Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD25483F4 20-V P-Channel FemtoFET™ MOSFET datasheet (Rev. F) | PDF | HTML | 10 Mar 2022 |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | Solving Assembly Issues with Chip Scale Power MOSFETs | PDF | HTML | 14 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
More literature | WCSP Handling Guide | 07 Nov 2019 | ||
Design guide | FemtoFET Surface Mount Guide (Rev. D) | 07 Jul 2016 |
Design & development
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Support software
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Reference designs
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Package | Pins | CAD symbols, footprints & 3D models |
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PICOSTAR (YJC) | 3 | Ultra Librarian |
Ordering & quality
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