Architecture
FET / CMOS Input, Voltage FB
Number of channels
1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
GBW (typ) (MHz)
100
BW at Acl (MHz)
250
Acl, min spec gain (V/V)
1
Slew rate (typ) (V/µs)
190
Vn at flatband (typ) (nV√Hz)
5.5
Vn at 1 kHz (typ) (nV√Hz)
5.5
Iq per channel (typ) (mA)
5.1
Vos (offset voltage at 25°C) (max) (mV)
0.3
Rail-to-rail
In, Out
Rating
Catalog
Operating temperature range (°C)
-40 to 125
CMRR (typ) (dB)
96
Input bias current (max) (pA)
50
Offset drift (typ) (µV/°C)
1.2
Iout (typ) (mA)
100
2nd harmonic (dBc)
79
3rd harmonic (dBc)
77
Frequency of harmonic distortion measurement (MHz)
1
Architecture
FET / CMOS Input, Voltage FB
Number of channels
1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
2.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
5.5
GBW (typ) (MHz)
100
BW at Acl (MHz)
250
Acl, min spec gain (V/V)
1
Slew rate (typ) (V/µs)
190
Vn at flatband (typ) (nV√Hz)
5.5
Vn at 1 kHz (typ) (nV√Hz)
5.5
Iq per channel (typ) (mA)
5.1
Vos (offset voltage at 25°C) (max) (mV)
0.3
Rail-to-rail
In, Out
Rating
Catalog
Operating temperature range (°C)
-40 to 125
CMRR (typ) (dB)
96
Input bias current (max) (pA)
50
Offset drift (typ) (µV/°C)
1.2
Iout (typ) (mA)
100
2nd harmonic (dBc)
79
3rd harmonic (dBc)
77
Frequency of harmonic distortion measurement (MHz)
1