Number of channels
4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
24
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
4.5
Vos (offset voltage at 25°C) (max) (mV)
0.04
Offset drift (typ) (µV/°C)
0.02
Input bias current (max) (pA)
600
GBW (typ) (MHz)
0.75
Features
Cost Optimized, EMI Hardened, Zero Drift
Slew rate (typ) (V/µs)
0.35
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
0.09
Vn at 1 kHz (typ) (nV√Hz)
38
CMRR (typ) (dB)
134
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.02
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.6
Output swing headroom (to positive supply) (typ) (V)
0.6
THD + N at 1 kHz (typ) (%)
0.001
Number of channels
4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)
24
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)
4.5
Vos (offset voltage at 25°C) (max) (mV)
0.04
Offset drift (typ) (µV/°C)
0.02
Input bias current (max) (pA)
600
GBW (typ) (MHz)
0.75
Features
Cost Optimized, EMI Hardened, Zero Drift
Slew rate (typ) (V/µs)
0.35
Rail-to-rail
In, Out
Iq per channel (typ) (mA)
0.09
Vn at 1 kHz (typ) (nV√Hz)
38
CMRR (typ) (dB)
134
Rating
Catalog
Operating temperature range (°C)
-40 to 125
Iout (typ) (A)
0.02
Architecture
CMOS
Input common mode headroom (to negative supply) (typ) (V)
-0.1
Input common mode headroom (to positive supply) (typ) (V)
0.1
Output swing headroom (to negative supply) (typ) (V)
0.6
Output swing headroom (to positive supply) (typ) (V)
0.6
THD + N at 1 kHz (typ) (%)
0.001